? 1/6 table 1: main product characteristics i f(av) up to 2 x 120 a v rrm 400 v t j (max) 150c v f (typ) 0.83 v t rr (max) 60 ns STTH20004TV1 ultrafast high voltage rectifier table 3: absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 400 v i f(rms) rms forward current 200 a i f(av) average forward current t c = 90 c = 0.5 per diode 100 a t c = 73 c = 0.5 per diode 120 i fsm surge non repetitive forward current t p = 10 ms sinusoidal 900 a t stg storage temperature range -55 to + 150 c t j maximum operating junction temperature 150 c a1 k1 a2 k2 k1 k2 a2 a1 isotop STTH20004TV1 october 2005 rev. 1 features and benefits ultrafast switching low reverse current low thermal resistance reduces switching & conduction losses description the STTH20004TV1 uses st new 400v technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. table 2: order codes part number marking STTH20004TV1 STTH20004TV1
stth20004tv 2/6 table 4: thermal resistance table 5: static electrical characteristics (per diode) pulse test: * t p = 5 ms, < 2% ** t p = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 0.8 x i f(av) + 0.002 i f 2 (rms) table 6: dynamic characteristics (per diode) symbol parameter value (max). unit r th(j-c) junction to case per diode 0.50 c/w total 0.30 r th(c) coupling 0.10 c/w when diodes 1 and 2 are used simultaneously: ? tj(diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) symbol parameter test conditions min. typ max. unit i r * reverse leakage current t j = 25 c v r = v rrm 100 a t j = 125 c 100 1000 v f ** forward voltage drop t j = 25 c i f = 100 a 1.2 v t j = 150 c 0.83 1.0 symbol parameter test conditions min typ max unit t rr reverse recovery time t j = 25 c i f = 1 a di f /dt = 50 a/s v r = 30 v 75 100 ns i f = 1 a di f /dt = 200 a/s v r = 30 v 45 60 i rm reverse recovery current t j = 125 c i f = 100 a v r = 200 v di f /dt = 100 a/s 18 a s factor softness factor t j = 125 c i f = 100 a v r = 200 v di f /dt = 100 a/s 0.4 t fr forward recovery time t j = 25 c i f = 100 a di f /dt = 200 a/s v fr = 1.1 x v fmax 800 ns v fp forward recovery voltage t j = 25 c i f = 100 a di f /dt = 200 a/s v fr = 1.1 x v fmax 2.6 v
stth20004tv 3/6 figure 1: conduction losses versus average forward current (per diode) figure 2: forward voltage drop versus forward current (per diode) figure 3: relative variation of thermal impedance junction to case versus pulse duration figure 4: peak reverse recovery current versus di f /dt (typical values, per diode) figure 5: reverse recovery time versus di f /dt (typical values, per diode) figure 6: reverse recovery charges versus di f /dt (typical values, per diode) 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 p(w ) =0.05 =0.1 =0.2 =0.5 =1 t =tp/t tp i f(av) (a) 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i fm (a) t j =25c (maximum values) t j =150c (maximum values) t j =150c (maximum values) t j =150c (typical values) t j =150c (typical values) v fm (v) i 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 z th(j-c) /r th(j-c) single pulse t p (s) 0 5 10 15 20 25 30 35 40 45 50 0 50 100 150 200 250 300 350 400 450 500 i rm (a) i f =i f(av) v r =200v t j =125c di f /dt(a/s) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450 500 t rr (ns) i f =i f(av) v r =200v t j =125c di f /dt(a/s) 0 500 1000 1500 2000 2500 3000 3500 0 50 100 150 200 250 300 350 400 450 500 q (nc) i f =i f(av) v r =200v t j =125c di f /dt(a/s) rr
stth20004tv 4/6 figure 7: reverse recovery softness factor versus di f /dt (typical values, per diode) figure 8: relative variations of dynamic parameters versus junction temperature figure 9: transient peak forward voltage versus di f /dt (typical values, per diode) figure 10: forward recovery time versus di f /dt (typical values, per diode) figure 11: junction capacitance versus reverse voltage applied (typical values, per diode) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 s fac tor i f < 2 x i f(av) v r =200v t j =125c di f /dt(a/s) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 i rm s factor i f =i f(av) v r =200v reference: t j =125c q rr t rr t j (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 50 100 150 200 250 300 350 400 450 500 v fp (v) i f =i f(av) t j =125c di f /dt(a/s) 0 200 400 600 800 1000 1200 1400 1600 1800 0 50 100 150 200 250 300 350 400 450 500 t fr (ns) i f =i f(av) v fr =1.1 x v f max. t j =125c di f /dt(a/s) 100 1000 10000 1 10 100 1000 c(pf) f=1mhz v osc =30mv rms t j =25c v r (v)
stth20004tv 5/6 figure 12: isotop package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 table 7: ordering information epoxy meets ul94, v0 cooling method: by conduction (c) ordering type marking package weight base qty delivery mode STTH20004TV1 STTH20004TV1 isotop 27 g (without screws) 10 (with screws) tube table 8: revision history date revision description of changes 18-oct-2005 1 first issue
stth20004tv 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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